BF1212R Ver la hoja de datos (PDF) - Philips Electronics

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componentes Descripción

Fabricante

BF1212R

N-channel dual-gate PoLo MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1212; BF1212R; BF1212WR

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

ORDERING INFORMATION

TYPE NUMBER

BF1212

BF1212R

BF1212WR

NAME

−

−

−

PACKAGE

DESCRIPTION

plastic surface mounted package; 4 leads

plastic surface mounted package; reverse pinning; 4 leads

plastic surface mounted package; reverse pinning; 4 leads

VERSION

SOT143B

SOT143R

SOT343R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

VDS

drain-source voltage

ID

drain current (DC)

IG1

gate 1 current

IG2

gate 2 current

Ptot

total power dissipation

BF1212; BF1212R

BF1212WR

Tstg

storage temperature

Tj

junction temperature

Ts ≤ 116 °C; note 1

Ts ≤ 122 °C; note 1

Note

1. Ts is the temperature of the soldering point of the source lead.

MIN.

−

−

−

−

MAX.

6

30

±10

±10

UNIT

V

mA

mA

mA

−

180

mW

−

180

mW

−65

+150

°C

−

150

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to soldering point

BF1212; BF1212R

BF1212WR

VALUE

185

155

UNIT

K/W

K/W

2003 Nov 14

3

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