BF1212R Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BF1212R Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
24
handbook, halfpage
ID
(mA)
16
8
MLE237
handbook,1h6alfpage
ID
(mA)
12
8
4
MLE238
0
0
10
20
30
40
50
IG1 (µA)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 150 kΩ (connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1 supply
voltage; typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
MLE239
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
4
0
0
2
4
6
VGG = VDS (V)
(1) RG1 = 47 kΩ.
(2) RG1 = 56 kΩ.
(3) RG1 = 82 kΩ.
(4) RG1 = 100 kΩ.
(5) RG1 = 120 kΩ.
(6) RG1 = 150 kΩ.
(7) RG1 = 180 kΩ.
(8) RG1 = 220 kΩ.
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG;
see Fig.21.
Fig.11 Drain current as a function of gate 1 and
drain supply voltage; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
MLE240
(1)
(2)
(3)
(4)
(5)
4
0
0
2
4
6
VG2-S (V)
(1) VGG = 5 V.
(2) VGG = 4.5 V.
(3) VGG = 4 V.
(4) VGG = 3.5 V.
(5) VGG = 3 V.
VDS = 5 V; Tj = 25 °C.
RG1 = 150 kΩ
(connected to VGG);
see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
2003 Nov 14
7
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