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BLF647 Datasheet PDF : 16 Pages
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Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF647
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 800 MHz)
• Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS
• Communication transmitter applications in the
HF to 800 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source, connected to flange
1
2
3
Top view
5
4
MBK777
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V)
(W)
(dB)
(%)
(dBc)
CW, class-AB
600
28
120
>14.5
>55
−
2-tone,
class-AB
f1 = 600; f2 = 600.1
28
120 (PEP)
>14.5
>40
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
VGS
ID
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
Tmb ≤ 25 °C
MIN.
−
−
−
−
−65
−
MAX.
65
±15
18
290
+150
200
UNIT
V
V
A
W
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27
2
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