BSH106 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BSH106

N-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode

MOS transistor

Product specification

BSH106

Gate-source voltage, VGS (V)

10

9

VDD = 20 V

RD = 20 Ohms

8 Tj = 25 C

7

6

5

4

3

2

1

0

0

2

4

6

Gate charge, QG (nC)

BSH105

8

Fig.13. Typical turn-on gate-charge characteristics.

VGS = f(QG)

Source-Drain Diode Current, IF (A)

-5

BSH105

-4.5

-4

-3.5

-3

-2.5

150 C

-2

Tj = 25 C

-1.5

-1

-0.5

0

0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

Drain-Source Voltage, VSDS (V)

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

August 1998

5

Rev 1.000

Share Link: