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BT236X Datasheet PDF : 13 Pages
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NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter Conditions
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67VDRM(max);
Tj = 125 C;
exponential
waveform; gate open
circuit
dVcom/dt rate of
change of
commutating
voltage
VDM = 400 V;
Tj = 95 C;
IT(RMS) = 6 A;
dIcom/dt = 3.6 A/ms;
gate open circuit;
see Figure 12
tgt
gate-
ITM = 12 A;
controlled
VD = VDRM(max);
turn-on time IG = 0.1 A;
dIG/dt = 5 A/s
BT236X-600
BT236X-800
Min Typ Max
100 250 -
BT236X-600F
Min Typ Max
50 250 -
BT236X-600G Unit
BT236X-800G
Min Typ Max
200 250 - V/s
-
20 -
-
20 - 10 20 - V/s
-
2
-
-
2
-
-
2 - s
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
(4)
1
001aae042
(3)
(4)
(2)
(1)
0.4
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
50
100
150
Tj (°C)
(1) T2 G
(2) T2+G
(3) T2+ G+
(4) T2G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BT236X_SER_F_G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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