BUK9606-75B Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BUK9606-75B

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

Nexperia

BUK9606-75B

N-channel TrenchMOS logic level FET

Table 1. Quick reference data …continued

Symbol Parameter

Conditions

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

Dynamic characteristics

ID = 75 A; Vsup ≤ 75 V;

RGS = 50 Ω; VGS = 5 V;

Tj(init) = 25 °C; unclamped

QGD

gate-drain charge

VGS = 5 V; ID = 25 A;

VDS = 60 V; Tj = 25 °C;

see Figure 13

[1] Continuous current is limited by package.

2. Pinning information

Min Typ Max Unit

-

-

852 mJ

-

37 -

nC

Table 2.

Pin

1

2

3

mb

Pinning information

Symbol Description

G

gate

D

drain[1]

S

source

D

mounting base;

connected to drain

[1] It is not possible to make a connection to pin 2.

3. Ordering information

Simplified outline

mb

2

13

SOT404 (D2PAK)

Graphic symbol

D

G

mbb076 S

Table 3. Ordering information

Type number

Package

Name

BUK9606-75B

D2PAK

Description

plastic single-ended surface-mounted package (D2PAK);

3 leads (one lead cropped)

Version

SOT404

BUK9606-75B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 20 July 2011

© Nexperia B.V. 2017. All rights reserved

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