BUZ350 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BUZ350

SIPMOS ® Power Transistor

Siemens AG 

BUZ 350

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TC = 25 °C

-

Inverse diode direct current,pulsed

ISM

TC = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 44 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

22

-

88

V

1.2

1.7

ns

180

-

µC

1.2

-

Semiconductor Group

4

07/96

Share Link: