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Número de pieza
componentes Descripción
BUZ110S Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BUZ110S
SIPMOS® Power Transistor
Infineon Technologies
BUZ110S Datasheet PDF : 8 Pages
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8
BUZ 110S
Power Dissipation
P
tot
=
f
(
T
C
)
BUZ110S
220
W
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ëš
C
190
T
C
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25
Ëš
C
10
3
BUZ110S
A
t
p
= 8.7µs
10 µs
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
BUZ110S
90
A
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Ëš
C
190
T
C
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
BUZ110S
K/W
10
0
10
2
10
1
10
0
10
-1
10
0
100 µs
1 ms
10 ms
DC
10
1
V
10
2
V
DS
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
Data Book
5
05.99
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