BYW51-200 Ver la hoja de datos (PDF) - STMicroelectronics
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BYW51-200 Datasheet PDF : 9 Pages
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BYW51/F/G/FP/R-200
®
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
trr (max)
2 x 10 A
200 V
150 °C
0.85 V
25 ns
FEATURES AND BENEFITS
s SUITED FOR SMPS
s VERY LOW FORWARD LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s HIGH SURGE CURRENT CAPABILITY
s INSULATED PACKAGES (ISOWATT220AB /
TO-220FP) :
Insulation voltage = 2000 V DC
Capacitance = 12 pF
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FP, D2PAK or I2PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
A1
K
A2
A2
K
A1
TO-220FPAB
BYW51FP-200
K
A2
A1
D2PAK
BYW51G-200
A2
K
A1
I2PAK
BYW51R-200
A2
K
A1
TO-220AB
BYW51-200
A2
A1 K
ISOWATT220AB
BYW51F-200
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current TO-220AB / D2PAK Tc=120°C Per diode
δ = 0.5
I2PAK
Per device
ISOWATT220AB Tc=95°C Per diode
Per device
TO-220FPAB
Tc=85°C Per diode
IFSM Surge non repetitive forward current
Tstg Storage temperature range
Per device
tp=10ms sinusoidal
Tj Maximum operating junction temperature
Value
Unit
200
V
20
A
10
A
20
10
20
10
20
100
A
- 65 to + 150 °C
150
°C
August 2002 - Ed: 3E
1/9
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