PXTA64 Ver la hoja de datos (PDF) - Philips Electronics
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PXTA64 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
PXTA64
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICES
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
VBEon
fT
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
IE = 0; VCB = −30 V
VBE = 0; VCE = −30 V
IC = 0; VBE = −10 V
IC = −10 mA; VCE = −5 V; see Fig.2
IC = −100 mA; VCE = −5 V; see Fig.2
IC = −100 mA; IB = −0.1 mA
IC = −100 mA; IB = −0.1 mA
IC = −100 mA; VCE = −5 V
IC = −100 mA; VCE = −5 V; f = 100 MHz
MIN.
−
−
−
10 000
20 000
−
−
−
125
MAX.
−100
−100
−100
−
−
−1.5
−1.5
−2
−
UNIT
nA
nA
nA
V
V
V
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
VCE = −2 V.
MGD836
−10
−102
−103
IC (mA)
Fig.2 DC current gain; typical values.
1997 Apr 24
4
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