CS5160 Ver la hoja de datos (PDF) - ON Semiconductor
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Fabricante
CS5160 Datasheet PDF : 18 Pages
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CS5160
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < +70°C; 0°C < TJ < +85°C; 9.5 V < VCC1 < 14 V; 5.0 V < VCC2 < 16 V; DAC
Code: VID4 = VID2 = VID1 = VID0 =1; VID3 = 0; CVGATE(L) and CVGATE(H) = 1.0 nF; COFF = 330 pF; CSS = 0.1 μF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
DAC
1
0
0
1
1
−
3.1360 3.2000 3.2640
V
1
0
0
1
0
−
3.2340 3.3000 3.3660
V
1
0
0
0
1
−
3.3320 3.4000 3.4680
V
1
0
0
0
0
−
3.4300 3.5000 3.5700
V
VGATE(H) and VGATE(L)
Out SOURCE Sat at 100 mA
Out SINK Sat at 100 mA
Out Rise Time
Measure VCC1 − VGATE(L); VCC2 − VGATE(H)
−
1.2
2.0
V
Measure VGATE(H) − VPGnd; VGATE(L) − VPGnd
−
1.0
1.5
V
1.0 V < VGATE(H) < 9.0 V; 1.0 V < VGATE(L)
< 9.0 V; VCC1 = VCC2 = 12 V
−
30
50
ns
Out Fall Time
9.0 V < VGATE(H) > 1.0 V; 9.0 V > VGATE(L)
> 1.0 V; VCC1 = VCC2 = 12 V
−
30
50
ns
Delay VGATE(H) to VGATE(L)
Delay VGATE(L) to VGATE(H)
VGATE(H), VGATE(L) Resistance
VGATE(H), VGATE(L) Schottky
VGATE(H) falling to 1.0 V; VCC1 = VCC2 = 8.0 V
45
70
CVGATE(H) = 3.3 nF; VGATE(L) rising to 1.0 V
95
ns
VGATE(L) falling to 1.0 V; VCC1 = VCC2 = 8.0 V
45
70
CVGATE(H) = 3.3 nF; VGATE(H) rising to 1.0 V
95
ns
Resistor to LGnd. Note 3
20
50
100
kΩ
LGnd to VGATE(H) @ 10 mA;
LGnd to VGATE(L) @ 10 mA
−
600
800
mV
Supply Current
ICC1 No Switching
ICC2 No Switching
Operating ICC1
Operating ICC2
COFF
Normal Charge Time
Discharge Current
Time Out Timer
Time Out Time
−
−
VFB = COMP = VFFB
VFB = COMP = VFFB
VFFB = 1.5 V; VSS = 5.0 V
COFF to 5.0 V; VFB > 1.0 V
VFB = VCOMP; VFFB = 2.0 V;
Record VGATE(H) Pulse High Duration
−
9.5
14.5
mA
−
2.0
3.5
mA
−
9.0
14
mA
−
2.5
5.5
mA
1.0
1.6
5.0
−
2.2
μs
−
mA
10
30
65
μs
Fault Mode Duty Cycle
VFFB = 0V
3. Guaranteed by design, not 100% tested in production.
35
50
70
%
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