DN0150BLP4-7B(2011) Ver la hoja de datos (PDF) - Diodes Incorporated.
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Fabricante
DN0150BLP4-7B Datasheet PDF : 5 Pages
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DN0150ALP4 / DN0150BLP4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
60
50
5
100
200
30
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
DN0150ALP4
DN0150BLP4
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Symbol Min
V(BR)CBO
60
V(BR)CEO
50
V(BR)EBO
5
ICBO
—
IEBO
—
VCE(SAT)
—
120
hFE
200
fT
60
Output Capactiance
Cob
—
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
Typ
—
—
—
—
—
0.10
—
—
—
1.3
Max
—
—
—
0.1
0.1
0.25
240
400
—
—
Unit
Test Condition
V IC = 10μA, IE = 0
V IC = 1mA, IB = 0
V IE = 10μA, IC = 0
μA VCB = 60V, IE = 0
μA VEB = 5V, IC = 0
V IC = 100mA, IB = 10mA
— VCE = 6V, IC = 2mA
MHz
pF
VCE = 10V, IE = -1mA
f = 30MHz
VCB = 10V, IE = 0,
f = 1MHz
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 4 - 2
2 of 5
www.diodes.com
January 2011
© Diodes Incorporated
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