DS1842 Ver la hoja de datos (PDF) - Maxim Integrated
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DS1842 Datasheet PDF : 7 Pages
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76V, APD, Bias Output Stage with
Current Monitoring
ABSOLUTE MAXIMUM RATINGS
Voltage Range on GATE and CLAMP
Relative to GND...................................................-0.3V to +12V
Voltage Range on MIRIN, MIROUT,
MIR1, and MIR2 Relative to GND........................-0.3V to +80V
Voltage Range on LX Relative to GND...................-0.3V to +85V
Continuous Power Dissipation (TA = +70°C)
TDFN (derate 24.4mW/°C above +70°C).................1951.2mW
Operating Junction Temperature Range ...........-40°C to +150°C
Storage Temperature Range .............................-55°C to +135°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (θJA) ............41°C/W
Junction-to-Case Thermal Resistance (θJC) ...................8°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(TA = -40°C to +85°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
Switching Frequency
FET Capacitance
FET Gate Resistance
FET On-Resistance
GATE Voltage
Switching Current
LX Voltage
LX Leakage
CLAMP Voltage
CLAMP Threshold
Maximum MIROUT Current
fSW
CGATE
CLX
RG
RDSON
VGS
ILX
VLX
IIL(LX)
VCLAMP
VCLT
IMIROUT
VGS = 0V, VDS = 25V
fSW = 1MHz
VGS = 3V, ID = 170mA
VGS = 10V, ID = 170mA
Duty cycle = 10%, fSW = 100kHz
VGATE = 0V, VLX = 76V
CLAMP = low
CLAMP = high
IMIROUT = 1mA
MIR1 to MIROUT Ratio
KMIR1 IMIROUT = 1μA
15V < VMIRIN < 76V
IMIROUT = 1mA
MIR2 to MIROUT Ratio
KMIR2 IMIROUT = 1μA
15V < VMIRIN < 76V
MIR1, MIR2 Rise Time (20%/80%)
tRC
(Note 2)
Shutdown Temperature
TSHDN (Note 3)
Leakage on GATE and CLAMP
IIL
Note 2: Rising MIROUT transition from 10µA to 1mA; VMIRIN = 40V, 2.5kΩ load.
Note 3: Guaranteed by design; not production tested.
MIN
0
0
-1
0
2
1.75
0.095
0.094
TYP
40
90
22
4.6
3.7
4
2.6
0.100
0.100
MAX
1.2
10
8
11
680
80
+1
11
7
4
10
0.105
0.106
UNITS
MHz
pF
V
mA
V
μA
V
V
mA
μA
A/A
0.190 0.200 0.210
0.188 0.200 0.212 A/A
30
ns
+150
°C
-1
+1
μA
2 _______________________________________________________________________________________
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