ECH8659 Ver la hoja de datos (PDF) - ON Semiconductor

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ECH8659

N-Channel Power MOSFET 30V, 7A, 24mΩ, Dual ECH8

ON Semiconductor 

Ordering number : ENA1224A

ECH8659

N-Channel Power MOSFET

30V, 7A, 24mΩ, Dual ECH8

http://onsemi.com

Features

• 4V drive

• Composite type, facilitating high-density mounting

• Halogen free compliance

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

When mounted on ceramic substrate (900mm2×0.8mm)

Ratings

Unit

30

V

±20

V

7

A

40

A

1.3

W

1.5

W

150

°C

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7011A-001

Top View

2.9

8

5

ECH8659-TL-H

0.15

0 to 0.02

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

TE

Lot No.

TL

1

4

0.65

0.3

Bottom View

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

ECH8

Electrical Connection

8

7

6

5

1

2

3

4

Semiconductor Components Industries, LLC, 2013

July, 2013

53012 TKIM/61808PA TIIM TC-00001318 No. A1224-1/7

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