FZT953(2000) Ver la hoja de datos (PDF) - Diodes Incorporated.

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Fabricante

FZT953
(Rev.:2000)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Diodes Incorporated. 

FZT953

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO -140 -170

V

IC=-100
A

Collector-Emitter Breakdown V(BR)CER

Voltage

-140 -170

V

IC=-1
A, RB1k

Collector-Emitter Breakdown V(BR)CEO

Voltage

-100 -120

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-6

-8

V

IE=-100
A

Collector Cut-Off Current

ICBO

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

ICER

R 1k

IEBO

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

-50 nA

-1

A

-50 nA

-1

A

-10 nA

-20 -50 mV

-90 -115 mV

-160 -220 mV

-300 -420 mV

-1010 -1170 mV

VCB=-100V

VCB=-100V, Tamb=100°C

VCB=-100V

VCB=-100V, Tamb=100°C

VEB=-6V

IC=-100mA, IB=-10mA*

IC=-1A, IB=-100mA*

IC=-2A, IB=-200mA*

IC=-4A, IB=-400mA*

IC=-4A, IB=-400mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-925 -1160 mV IC=-4A, VCE=-1V*

Static Forward

Current Transfer

Transition Frequency

hFE

100 200

100 200 300

50

90

30

50

15

IC=-10mA, VCE=-1V*

IC=-1A, VCE=-1V*

IC=-3A, VCE=-1V*

IC=-4A, VCE=-1V*

IC=-10A, VCE=-1V*

fT

125

MHz IC=-100mA, VCE=-10V

f=50MHz

Output Capacitance

Cobo

65

pF

Switching Times

ton

toff

110

ns

460

ns

*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%

Spice parameter data is available upon request for this device

VCB=-10V, f=1MHz

IC=-2A, IB1=-200mA

IB2=200mA, VCC=-10V

3 - 282

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