FA5590N,FA5591N
MOSFET turn on.
(6-2) Overcurrent detection protective circuit
The overcurrent detection protective circuit detects the inductor
current and protects MOSFET by turning off the OUT output when it
becomes higher than a set current level. With the overcurrent detection,
the voltage across the current detection resistance Rs connected to the
GND is fed to the IS terminal, and when the IS terminal voltage
compared by the overcurrent detection comparator becomes lower than
-0.6V, it is regarded as overcurrent state.
When the overcurrent is detected, the F/F for OUT output is reset to
make MOSFET turn off.
(7) Zero cross delay time setting circuit
Vds between the drain and the sources of the MOSFET starts
oscillating through resonance of L1 and the parasitic capacitor
component on the circuit just before the MOSFET turns on.
inductor
イcンurダreクnタt電流
MOVSdFEsT の Vds
Tzcd
T< 1/Fmax
Fig.11 when the switching frequency is
lower than the maximum frequency Fmax
When the proper value of Rtzc, the turn on timing of MOSFET can be
adjusted at the bottom of the voltage oscillation. This makes it possible
to minimize the switching loss and the surge current generated at the
turn-on. (Fig. 13)
When the Rtzc is smaller, the turn-on timing becomes earlier, and
vice versa. (Fig. 14)
Since the optimum value of this Rtzc changes depending on the
circuit and input/output conditions, tuning up is required so as to achieve
an optimum state while evaluating the operation with actual circuit.
(8) Restart timer
This IC utilizes self oscillation instead of the oscillator with fixed
frequency, and in the steady operation, it turns on MOSFET with a signal
from the zero current detector.
But in start up or light load condition, a trigger signal is required for
starting up or stable operation.
This IC is provided with a restart timer, and when the output of IC
continues turn off for 20μs or more, the trigger signal is automatically
generated.
This signal can realize stable operation even when starting up or the
load is light.
inductor
イcンuダrrクeタn電t 流
MOVSdFsET の Vds
Tzcd
T= 1/Fmax
Fig.12 when the switching frequency is
limited to the maximum frequency Fmax
MVdOsSFET
のVds
(9) Under Voltage Lock out (UVLO)
UVLO is equipped to prevent circuit malfunction when supply voltage
drops.
When the supply voltage rises from zero, the operation starts at 9.6V
(typ.) for FA5590 and 13V (typ.) for FA5591.
When the supply voltage decreases after the operation starts, either part
number stops the operation at 9V (typ.).
When UVLO is on and IC stops operation the OUT terminal becomes
LOW and cuts off the output. The current consumption of the IC
decreases to 80μA or less.
Tzcd(RTtzcd最適)
(with adequate Rtzc)
Fig.13 Vds waveform at turn on
(with adequate Rtzc)
(10) Output circuit portion
MOSFET
The output portion is of push-pull circuit and can directly drive the
Vds
のVds
MOSFET. The peak current of the output portion is 1.0A maximum for
sink and 0.5A maximum for source.
Tzcd(TRztczdcが小さい)
(Rtzc is too small)
Tzcd(RtTzzccがd 大きい)
(Rtzc is too large)
Fig.14 Vds waveform at turn on
(with inadequate Rtzc)
Fuji Electric Co., Ltd.
AN-016E Rev.1.2
April-2011
15
http://www.fujielectric.co.jp/products/semiconductor/