FDB029N06 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDB029N06 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FDB029N06
Device
FDB029N06
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
60
ID = 1mA, Referenced to 25oC
-
VDS = 48V, VGS = 0V
-
VDS = 48V, TC = 150oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
2.5
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller†Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 30V, ID = 75A
-
VGS = 10V, RGEN = 4.7Ω
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ.
-
0.05
-
-
-
3.5
2.4
154
7380
1095
415
116
40
35
39
178
54
33
-
-
-
46
50
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5
V
3.1 mΩ
-
S
9815 pF
1455 pF
625 pF
151 nC
-
nC
-
nC
87
ns
366
ns
118
ns
76
ns
193
A
772
A
1.3
V
-
ns
-
nC
FDB029N06 Rev. A
2
www.fairchildsemi.com
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