FDD6632 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD6632 Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
TJ = 25oC
10
5
TJ = 175oC
TJ = -55oC
0
1
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
VGS = 10V
VGS = 5V
15
VGS = 4.5V
10
VGS = 3.5V
5
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Saturation Characteristics
150
125
ID = 6A
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 9A
75
50
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
VGS = 10V, ID = 9A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.2
1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDD6632 Rev. B1
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