FDS7766S Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDS7766S Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS7766S.
12.5 nS/div
Figure 12. FDS7766S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS7766).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
0.001
TA = 125oC
TA = 100oC
0.0001
0.00001
0
TA = 25oC
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
12.5 nS/div
Figure 13. Non-SyncFET (FDS7766) body
diode reverse recovery characteristic.
FDS7766S Rev C (W)
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