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Número de pieza
componentes Descripción
FGL40N120ANDTU Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGL40N120ANDTU
1200V NPT IGBT
Fairchild Semiconductor
FGL40N120ANDTU Datasheet PDF : 9 Pages
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Electrical Characteristics of DIODE
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V
FM
Diode Forward Voltage
I
F
= 40A
T
C
= 25
°
C
T
C
= 125
°
C
t
rr
Diode Reverse Recovery Time
T
C
= 25
°
C
T
C
= 125
°
C
I
rr
Diode Peak Reverse Recovery
Current
I
F
= 40A,
di/dt = 200A/
µ
s
T
C
= 25
°
C
T
C
= 125
°
C
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
°
C
T
C
= 125
°
C
Min.
--
--
--
--
--
--
--
--
Typ.
3.2
2.7
75
130
8
13
300
845
Max.
4.0
--
112
--
12
--
450
--
Units
V
nS
A
nC
3
FGL40N120AND Rev. A
www.fairchildsemi.com
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