GA200NS61U Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
GA200NS61U Datasheet PDF : 9 Pages
| |||
GA200NS61U
40000
30000
20000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
10000
Coes
Cres
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 5 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1
20 VCC = 400V
I C = 135A
16
12
8
4
0
0
200
400
600
800
1000
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
D = 0.50
0.1
0.01
0.0001
0.20
PDM
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
t1
t2
2. Peak TJ= PDMx ZthJC + TC
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
A
1000
Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
Share Link: 