HBNP3946S6R Ver la hoja de datos (PDF) - Cystech Electonics Corp.

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HBNP3946S6R

General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C902S6R

Issued Date : 2003.03.18

Revised Date :

Page No. : 1/5

General Purpose NPN / PNP Epitaxial Planar Transistors

(dual transistors)

HBNP3946S6R

Features

• Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

Equivalent Circuit

HBNP3946S6R

SOT-363R

Absolute Maximum Ratings (Ta=25°C)

Parameter

Limits

Symbol

Unit

TR1 (NPN)

TR2 (PNP)

Collector-Base Voltage

VCBO

60

-40

V

Collector-Emitter Voltage

VCEO

40

-40

V

Emitter-Base Voltage

VEBO

6

-5

V

Collector Current

IC

200

-200

mA

Power Dissipation

Pd

300(total) *1

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note: *1 200mW per element must not be exceeded.

HBNP3946S6R

CYStek Product Specification

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