HBTA16A60 Ver la hoja de datos (PDF) - Shantou Huashan Electronic Devices
Número de pieza
componentes Descripción
Fabricante
HBTA16A60 Datasheet PDF : 3 Pages
| |||
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA16A60
ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ）
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=16A)
* High Commutation dv/dt
*Isolation Voltage（VISO=2500V AC）
█ General Description
The Triac HBTA16A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,and static switching relay.
█ Absolute Maximum Ratings（Ta=25℃）
Tstg——Storage Temperature……………………………………………………………… －40~125℃
Tj ——Operating Junction Temperature …………………………………………………… －40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT（RMS）——R.M.S On-State Current（Ta=68℃）………………………………………………… 16A
VG M——Peak
I G M——Peak
Gate Voltage………………………………………………………………… 10V
Gate Current…………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………………… 155/170A
VISO——RMS Isolation Breakdown Voltage……………………………………………………… 2500V
█ Electrical Characteristics（Ta=25℃）
Symbol
Items
IDRM
VTM
I+GT1
I- GT1
I-GT3
V+ G T1
V- GT1
V- GT3
VGD
(dv/dt)c
Rth(j-c)
IH
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
Min.
0.2
10
25
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
3.0
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
℃/W
mA
Conditions
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
IT=25A, Inst. Measurement
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
TJ=125℃,VD=1/2VDRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-8.0A/ms
Junction to case
Share Link: 