Philips Semiconductors
PNP switching transistors
Product specification
2N2906; 2N2906A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• High-speed switching
• Driver applications for industrial service.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
collector-base voltage
collector-emitter voltage
2N2906
2N2906A
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
toff
turn-off time
open emitter
open base
CONDITIONS
Tamb ≤ 25 °C
IC = −150 mA; VCE = −10 V
IC = −50 mA; VCE = −20 V; f = 100 MHz
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA
MIN. MAX. UNIT
−
−60
V
−
−40
V
−
−60
V
−
−600 mA
−
400
mW
40
120
200
−
MHz
−
300
ns
1997 Jun 02
2