2N2906 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

2N2906

PNP switching transistors

Philips Electronics 

Philips Semiconductors

PNP switching transistors

Product specification

2N2906; 2N2906A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

collector-emitter voltage

2N2906

2N2906A

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tcase ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

Rth j-c

thermal resistance from junction to ambient in free air

thermal resistance from junction to case

MIN. MAX. UNIT

−

−60

V

−

−40

V

−

−60

V

−

−5

V

−

−600 mA

−

−800 mA

−

−200 mA

−

400

mW

−

1.2

W

−65

+150 °C

−

200

°C

−65

+150 °C

VALUE

438

146

UNIT

K/W

K/W

1997 Jun 02

3

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