HN1B01F-Y Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

HN1B01F-Y

Transistor Silicon PNP Epitaxial Type (PCTProcess) Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

HN1B01FU

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Symbol

VCBO

VCEO

VEBO

IC

IB

Rating

60

50

5

150

30

Equivalent Circuit (Top View)

Unit

V

V

V

mA

mA

2

2007-11-01

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