HSU226 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HSU226

Silicon Schottky Barrier Diode for High Speed Switching

Renesas Electronics 

HSU226

Absolute Maximum Ratings

(Ta = 25°C)

Item

Repetitive peak reverse voltage

Non-Repetitive Peak forward surge current

Forward current

Junction temperature

Storage temperature

Note: 1. 10 ms Sine Wave 1 pulse

Symbol

VRRM

IFSM *1

IF

Tj

Tstg

Value

Unit

25

V

200

mA

50

mA

125

°C

−55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Forward voltage

VF1





0.33

V

IF = 1 mA

VF2





0.38

V

IF = 5 mA

Reverse current

IR





0.45

µA

VR = 20 V

Capacitance

C





2.80

pF

VR = 1 V, f = 1 MHz

Rev.1.00, Apr.15.2003, page 2 of 5

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