Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
HYB39S256400TE-8 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
HYB39S256400TE-8
MEMORY SPECTRUM
Infineon Technologies
HYB39S256400TE-8 Datasheet PDF : 28 Pages
First
Prev
21
22
23
24
25
26
27
28
Specialty DRAMs
Nomenclature Reduced Latency DRAM (RLDRAM
™
)
HYB 18 RL 256 32 A
C -4
(Example)
Speed
Package
Product Revision
Organization
Memory Density
Memory Type
I/O Voltage
Prefix
4 = 250 MHz
5 = 200 MHz
C = FBGA
Die Revision
32 = x 32
16 = x 16
256 = 256 Mb
RL = Reduced Latency DRAM (RLDRAM)
18 = 1.8 V (VDDQ)
HYB = Standard Prefix for Memory Components
Reduced Latency DRAM (RLDRAM
™
)
Density
256 Mb
Organization
Power Supply
8 M x 32
16 M x 16
2.5 V / 1.8 V VDDQ
Speed
250 MHz
200 MHz
250 MHz
200 MHz
Sales Description
Speed No.
Ordering Code
Package
4 Q67100 Q4355
HYB18RL25632AC-
5 Q67100 Q4357
T-FBGA-144
4 Q67100 Q4356
HYB18RL25616AC-
5 Q67100 Q4358
Prod.
Now
Green
21
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]