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HYB39S256400TE-8 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
HYB39S256400TE-8
Infineon
Infineon Technologies 
HYB39S256400TE-8 Datasheet PDF : 28 Pages
First Prev 21 22 23 24 25 26 27 28
Specialty DRAMs
Nomenclature Reduced Latency DRAM (RLDRAM)
HYB 18 RL 256 32 A
C -4
(Example)
Speed
Package
Product Revision
Organization
Memory Density
Memory Type
I/O Voltage
Prefix
4 = 250 MHz
5 = 200 MHz
C = FBGA
Die Revision
32 = x 32
16 = x 16
256 = 256 Mb
RL = Reduced Latency DRAM (RLDRAM)
18 = 1.8 V (VDDQ)
HYB = Standard Prefix for Memory Components
Reduced Latency DRAM (RLDRAM)
Density
256 Mb
Organization
Power Supply
8 M x 32
16 M x 16
2.5 V / 1.8 V VDDQ
Speed
250 MHz
200 MHz
250 MHz
200 MHz
Sales Description Speed No. Ordering Code
Package
4 Q67100 Q4355
HYB18RL25632AC-
5 Q67100 Q4357
T-FBGA-144
4 Q67100 Q4356
HYB18RL25616AC-
5 Q67100 Q4358
Prod.
Now
Green
21

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