Q67100-Q973 Ver la hoja de datos (PDF) - Siemens AG
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componentes Descripción
Fabricante
Q67100-Q973 Datasheet PDF : 24 Pages
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HYB 514400BJ-50/-60
1M × 4 DRAM
AC Characteristics (cont’d) 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time referenced to RAS
CAS to output in low-Z
Output buffer turn-off delay
Output buffer turn-off delay from OE
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
Symbol
Limit Values
Unit
-50
-60
min. max. min. max.
tRAL
25 –
30 –
ns
tRCS
0–
0–
ns
tRCH
0–
0–
ns
tRRH
0–
0–
ns
tCLZ
0–
0–
ns
tOFF
0 13 0 15 ns
tOEZ
0 13 0 15 ns
tDZC
0–
0–
ns
tDZO
0–
0–
ns
tCDD
13 –
15 –
ns
tODD
13 –
15 –
ns
Note
11
11
8
12
12
13
13
14
14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
tWCH
tWP
tWCS
tRWL
tCWL
tDS
tDH
8–
8–
0–
13 –
13 –
0–
10 –
10 –
10 –
0–
15 –
15 –
0–
10 –
ns
ns
ns 15
ns
ns
ns 16
ns 16
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
tRWC
tRWD
tCWD
tAWD
tOEH
131 –
68 –
31 –
43 –
13 –
150 –
80 –
35 –
50 –
15 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
tPC
35 –
40 –
ns
tCP
10 –
10 –
ns
Semiconductor Group
7
1998-10-01
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