IRF6612 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRF6612 Datasheet PDF : 10 Pages
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PD - 95842
IRF6612/IRF6612TR1
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
VDSS
30V
RDS(on) max Qg(typ.)
3.3mΩ@VGS = 10V
4.4mΩ@VGS = 4.5V
30nC
MX
DirectFET ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switch-
ing losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck convert-
ers including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socket.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
Junction-to-PCB Mounted
Notes through are on page 10
www.irf.com
Max.
30
±20
136
24
19
190
2.8
1.8
89
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
V
A
W
W/°C
°C
Units
°C/W
1
02/02/04
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