IRF6612 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF6612

HEXFET Power MOSFET

International Rectifier 

IRF6612/IRF6612TR1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

24

2.5

3.4

–––

3.3

4.4

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 24A

e VGS = 4.5V, ID = 19A

Gate Threshold Voltage

1.35 ––– 2.25 V VDS = VGS, ID = 250µA

Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 100

VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

Forward Transconductance

96 ––– ––– S VDS = 15V, ID = 19A

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 30 45

––– 8.5 –––

––– 2.9 –––

––– 10 –––

––– 8.6 –––

––– 13 –––

––– 18 –––

––– 15 –––

––– 52 –––

––– 21 –––

––– 4.8 –––

––– 3970 –––

––– 780 –––

––– 360 –––

VDS = 15V

nC VGS = 4.5V

ID = 19A

Ãe nC VDS = 16V, VGS = 0V

VDD = 16V, VGS = 4.5V

ID = 19A

ns Clamped Inductive Load

VGS = 0V

pF VDS = 15V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

Ù Avalanche Current

Typ.

–––

–––

Max.

37

19

Units

mJ

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 24

MOSFET symbol

D

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 190

––– ––– 1.0

––– 19 29

––– 8.1 12

integral reverse

G

p-n junction diode.

S

e V TJ = 25°C, IS = 19A, VGS = 0V

e ns TJ = 25°C, IF = 19A

nC di/dt = 100A/µs

2

www.irf.com

Share Link: