IRF7807Z(2003) Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF7807Z
(Rev.:2003)

HEXFET Power MOSFET

International Rectifier 

100

VGS

TOP

10V

8.0V

4.5V

3.8V

3.3V

10

3.0V

2.8V

BOTTOM 2.5V

1

2.5V

0.1

00.1

20µs PULSE WIDTH

Tj = 25°C

1

10

1100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRF7807Z

100

VGS

TOP

10V

8.0V

4.5V

3.8V

3.3V

3.0V

2.8V

BOTTOM 2.5V

10

2.5V

1

00.1

20µs PULSE WIDTH

Tj = 150°C

1

10

1100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.0

TJ = 150°C

10.0

TJ = 25°C

1.0

2.0

VDS = 15V

20µs PULSE WIDTH

3.0

4.0

5.0

6.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0

ID = 11A

VGS = 10V

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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