IRF840S(2016) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRF840S Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840S, SiHF840S
Vishay Siliconix
VGS
Top 15 V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
100
91071_01
4.5 V
20 µs Pulse Width
TC = 25 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
VGS
Top 15 V
101
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
100
91071_02
20 µs Pulse Width
TC = 150 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
150 °C
101
25 °C
100
4
91071_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 8.0 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91071_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
2500
2000
1500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
Coss
Crss
0
100
91071_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 8.0 A
16
VDS = 400 V
VDS = 250 V
12
VDS = 100 V
8
4
0
0
91071_06
For test circuit
see figure 13
15
30
45
60
75
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. D, 02-May-16
3
Document Number: 91071
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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