Pre-Irradiation
IRHM7264SE, JANSR2N7434
8000
6000
4000
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 31A
16
VDS = 125V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
VGS = 0 V
1
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µs
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5