IRPT2056A
3000
2500
2000
1500
VCGieEs
= 0V,
= Cge+
f = 1MHz
Cgc , Cce SHORTED
Cres = Cgc
Coes= Cce + Cgc
C ies
1000
500
C oes
C res
01
10
100
VCE , Collector-to-Emitter Voltage (
Figure 5a. Typical Capacitance vs
Collector-to-Emitter Voltage
20
VCC = 400V
IC = 25A
16
12
8
4
0
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Figure 5b. Typical Gate Charge vs
Gate-to-Emitter Voltage
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
5µs PULSE WIDTH•A
1
5
7
9
11
VGE, Gate-to-Emitter Voltage (V)
Figure 5c. Typical Transfer Characteristics
Figure 6. Nominal R-T Characteristics of the
NTC␣ Thermistor
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