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IS75V16F128GS32 Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS75V16F128GS32 Datasheet PDF : 52 Pages
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IS75V16F128GS32
ISSI ®
DC CHARACTERISTICS
Symbol Parameter
Test Conditions
ILI
Input Leakage
VIN=GND to VCCf, VCCr
ILO
ILIT
ICC1f
Output Leakage
RESET Inputs
Leakage Current
FLASH Vcc (1)
Active Current (Read)
VOUT=GND to VCCf, VCCr
VCCf=VCCf max.,
RESET = 12.5V
CEf=VIL, OE=VIH
tCycle = 5Mhz
ICC2f
ICC3f
FLASH Vcc Active(2)
Current(Program/Erase)
FLASH Vcc Active(5)
Current
(Read-While-Program)
CEf=VIL,
OE=VIH
CEf=VIL,
OE=VIH
tCycle = 1Mhz
ICC4f
ICC5f
IACC
FLASH Vcc Active(5)
Current
CEf=VIL,
OE=VIH
(Read-While-Erase)
FLASH Vcc Active
Current
CEf=VIL,
OE=VIH
(Erase-Suspend-Program)
WP/ACC Acceleration
Program Current
VCCf = Vcc max,
WP/ACC = VACC max
ICC1r PSRAM Vcc Active
Current
ISB1f
FLASH Vcc
Standby Current(7)
VCCr = Vccr max,
trc / twc = min
CE1r=VIL, CE2r=VIH,
VIN=VIH or VIL,
trc / twc = 1 µs
IOUT=0 mA
VCCf = Vccf max, CEf= VCCf + 0.3V,
RESET = VCCf + 0.3V,
WP/ACC = VCCf + 0.3V
ISB2f
FLASH Vcc (7)
Standby Current
(RESET)
VCCf = Vccf max, RESET= GND + 0.3V,
WP/ACC = VCCf + 0.3V
ISB3f
FLASH Vcc (3,7)
Current
(Automatic Sleep Mode)
VCCf = Vccf max, CEf = GND + 0.3V,
RESET = VCCf + 0.3V,
WP/ACC = VCCf + 0.3V,
VIN = VCCf + 0.3V OR GND + 0.3V
ISB1r
PSRAM Vcc Standby(8)
Current
VCCr = Vccr max, CE1r VCCr -0.2V,
CE2r VCCr -0.2V,
VIN 0.2 V or VIN VCCr -0.2V
IPDSr PSRAM VCC Power
Down Current
(Sleep Mode)
VCCr = VCCr max.,
CE1r VCCr - 0.2 V
CE2r 0.2 V, VIN Cycle time = tRC min
IPDNr
PSRAM VCC Power (8)
Down Current
(Nap Mode)
VCCr = VCCr max.,
CE1r VCCr - 0.2 V
CE2r 0.2 V, VIN Cycle time = tRC min
Min. Typ. Max.
-1.0 — +1.0
-1.0 — +1.0
— 35
— 18
4
— 35
— 53
— 53
— 40
— 20
— 25
3
1
5
1
5
1
5
——
110
10
65
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03

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