IXFH6N120 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH6N120 Datasheet PDF : 4 Pages
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IXFH 6N120
Fig. 7. Input Admittance
6
5
4
3
TJ = -40ºC
25ºC
125ºC
2
1
0
3.5
4
4.5
5
5.5
6
6.5
VGS - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
20
16
12
8
4
0
0.4
TJ = 125ºC
TJ = 25ºC
0.5
0.6
0.7
0.8
0.9
VSD - Volts
Fig. 8. Transconductance
12
10
TJ = -40ºC
8
25ºC
125ºC
6
4
2
0
0
1.5
3
4.5
6
7.5
9
ID - Amperes
Fig. 10. Gate Charge
10
VDS = 600V
8
ID = 3A
IG= 10mA
6
4
2
0
0
10
20
30
40
50
60
QG - nanoCoulombs
10000
Fig. 11. Capacitance
f = 1M hz
1000
100
Ciss
C oss
Crss
10
0 5 10 15 20 25 30 35 40
VDS - Volts
Fig. 12. Maximum Transient Thermal
Resistance
1
0.1
0.01
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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