K4B1G0446G-BCH9 Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Fabricante

K4B1G0446G-BCH9

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

Samsung 

K4B1G0446G

K4B1G0846G

datasheet

Rev. 1.01

DDR3 SDRAM

NOTE :

1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibra-

tion, see following section on voltage and temperature sensitivity

2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS

3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5XVDDQ. Other calibration schemes may be used to achieve the linearity spec shown above, e.g.

calibration at 0.2XVDDQ and 0.8XVDDQ.

4. Not a specification requirement, but a design guide line

5. Measurement definition for RTT:

Apply VIH(AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure current I(VIL(AC)) respectively

RTT =

VIH(AC) - VIL(AC)

I(VIH(AC)) - I(VIL(AC))

6. Measurement definition for VM and ∆VM : Measure voltage (VM) at test pin (midpoint) with no load

∆ VM =

2 x VM - 1 x 100

VDDQ

9.8.2 ODT Temperature and Voltage sensitivity

If temperature and/or voltage change after calibration, the tolerance limits widen according to table below

∆T = T - T(@calibration); ∆V = VDDQ - VDDQ (@calibration); VDD = VDDQ

[ Table 26 ] ODT Sensitivity Definition

RTT

Min

0.9 - dRTTdT * |∆T| - dRTTdV * |∆V|

Max

1.6 + dRTTdT * |∆T| + dRTTdV * |∆V|

[ Table 27 ] ODT Voltage and Temperature Sensitivity

Min

dRTTdT

0

dRTTdV

0

NOTE : These parameters may not be subject to production test. They are verified by design and characterization.

Max

1.5

0.15

Units

RZQ/2,4,6,8,12

Units

%/°C

%/mV

- 23 -

Share Link: