K4S641632H-TL75 Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Fabricante

K4S641632H-TL75

64Mb H-die SDRAM Specification

Samsung 

SDRAM 64Mb H-die (x4, x8, x16)

IBIS SPECIFICATION

IOH Characteristics (Pull-up)

Voltage

133MHz

Min

(V)

I (mA)

3.45

-

3.30

-

3.00

-0.35

2.70

-3.75

2.50

-6.65

1.95

-13.75

1.80

-17.75

1.65

-20.55

1.50

-23.55

1.40

-26.2

1.00

-36.25

0.20

-46.5

133MHz

Max

I (mA)

-1.68

-19.11

-51.87

-90.44

-107.31

-137.9

-158.34

-173.6

-188.79

-199.01

-241.15

-351.68

CMOS SDRAM

133MHz Pull-up

0 0.5 1 1.5 2 2.5 3 3.5

0

-100

-200

-300

-400

-500

-600

Voltage

IOH Min (133MHz)

IOH Max (133MHz)

IOL Characteristics (Pull-down)

Voltage

133MHz

Min

(V)

I (mA)

3.45

43.92

3.30

-

3.00

43.36

1.95

41.20

1.80

40.56

1.65

39.60

1.50

38.40

1.40

37.28

1.00

30.08

0.85

26.64

0.65

21.52

0.40

14.16

133MHz

Max

I (mA)

155.82

-

153.72

148.40

146.02

141.75

136.08

131.39

105.84

93.66

75.25

49.14

133MHz Pull-down

250

200

150

100

50

0

0 0.5 1 1.5 2 2.5 3 3.5

Voltage

IOL Min (133MHz)

IOL Max (133MHz)

Rev. 1.8 August 2004

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