KSP12 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

KSP12

NPN Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

1M

100k

VCE = 5V

10k

1k

1

10

100

1000

IC [mA], COLLECTOR CURRENT

Figure 1. DC current Gain

VCE = 5V

100

10

1

0.0

0.4

0.8

1.2

1.6

2.0

2.4

VBE [V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

10

IC = 1000 IB

VBE(sat)

1

VCE(sat)

0.1

10

100

IC[mA], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

VCE = 5V

100

10

1

10

100

IC[mA], COLLECTOR CURRENT

Figure 4. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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