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LUCL7585FP

Full-Feature, Low-Power SLIC and Switch

Agere -> LSI Corporation 

L7585F Full-Feature, Low-Power SLIC and Switch

Data Sheet

September 2001

Electrical Characteristics (continued)

Table 14. Tip and Ring Break Switches (SW2 and SW4)

Parameter

Min

Typ

Off-state:

Maximum Differential Voltage

dc Leakage Current (VSW = ±320 V)

Feedthrough Capacitance2

—

—

—

—

—

—

On-state (See On-State Switch V-I Characteristics section.):

Resistance (RON)

—

25

Maximum Differential Voltage (Vmax)

—

—

Foldback Voltage Breakpoint 1 (V1)

60

—

Foldback Voltage Breakpoint 2 (V2)

V1 + 0.5

—

Current Limit (ILIMIT1)

85

160

Current Limit (ILIMIT2)

2

—

dV/dT Sensitivity2, 3

—

200

Max

±3201

±20

50

50

3201

—

—

250

—

2000

Unit

V

µA

pF

Ω

V

V

V

mA

mA

V/µs

1. At 25 °C, maximum voltage rating has a temperature coefficient of +0.167 V/°C.

2. This parameter is not tested in production; it is guaranteed by design and device characterization.

3. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dt sensitivity at 200 V/µs typical with no switch turn-on. In the case of

dV/dt induced turn-on at higher dV/dt and amplitude, the design objective is no damage to at least 2000 V/µs and full voltage. A known con-

dition that can cause damage is initial current flow prior to the application of the dV/dt and the sudden application of reverse bias with dV/dt

induced switch turn-off. In this case, no damage shall occur for dV/dt up to 2000 V/µs as guaranteed by design and characterization.

Table 15. Tip and Ring Feedback Switches (SW2a and SW4a)

Parameter

Min

Typ

Max

Unit

Off-state:

Maximum Differential Voltage

dc Leakage Current (VSW = ±320 V)

Feedthrough Capacitance2

—

—

±3201

V

—

—

±10

µA

—

—

15

pF

On-state (See On-State Switch V-I Characteristics section.):

Resistance (RON)

—

Maximum Differential Voltage (Vmax)

—

Current Limit (ILIMIT)

0.5

4

10

kΩ

—

3201

V

—

20

mA

dV/dT Sensitivity2, 3

—

200

2000

V/µs

1. At 25 °C, maximum voltage rating has a temperature coefficient of +0.167 V/°C.

2. This parameter is not tested in production; it is guaranteed by design and device characterization.

3. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dt sensitivity at 200 V/µs typical with no switch turn-on. In the case of

dV/dt induced turn-on at higher dV/dt and amplitude, the design objective is no damage to at least 2000 V/µs and full voltage. A known con-

dition that can cause damage is initial current flow prior to the application of the dV/dt and the sudden application of reverse bias with dV/dt

induced switch turn-off. In this case, no damage shall occur for dV/dt up to 2000 V/µs as guaranteed by design and characterization.

16

Agere Communications Inc.

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