MOC8030 MOC8050
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
Reverse Leakage Current
(VR = 3 V)
Forward Voltage
(IF = 10 mA)
IR
—
VF
—
Capacitance
(VR = 0 V, f = 1 MHz)
C
—
PHOTODARLINGTON (TA = 25°C and IF = 0, unless otherwise noted)
Collector–Emitter Dark Current
(VCE = 60 V)
ICEO
—
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Collector Breakdown Voltage
(IE = 100 µA)
COUPLED (TA = 25°C unless otherwise noted)
Collector Output Current
(VCE = 1.5 V, IF = 10 mA)
MOC8030
MOC8050
Isolation Surge Voltage(3,4), 60 Hz Peak ac, 5 Second
Isolation Resistance(3)
(V = 500 V)
V(BR)CEO
80
V(BR)ECO
5
IC (CTR)(2)
VISO
RISO
30 (300)
50 (500)
7500
—
Isolation Capacitance(3)
(V = 0 V, f = 1 MHz)
CISO
—
SWITCHING
Turn–On Time
ton
—
Turn–Off Time
Rise Time
VCC = 10 V, RL = 100 Ω, IF = 5 mA(5)
toff
—
tr
—
Fall Time
tf
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
5. For test circuit setup and waveforms, refer to Figure 9.
Typ(1)
0.05
1.15
18
—
—
—
—
—
—
1011
0.2
3.5
95
1
2
TYPICAL CHARACTERISTICS
2
PULSE ONLY
1.8
PULSE OR DC
1.6
10
NORMALIZED TO: IF = 10 mA
TA = 25°C
1
Max
Unit
10
µA
2
Volts
—
pF
1
µA
—
Volts
—
Volts
mA (%)
—
—
—
Vac(pk)
—
Ohms
—
pF
—
µs
—
—
—
1.4
TA = –55°C
1.2
25°C
1
100°C
1
10
100
1000
IF, LED FORWARD CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
0.1 TA = –55°C THRU
+25°C
+70°C
+100°C
0.01
0.5 1 2
5 10 20
50
IF, LED INPUT CURRENT (mA)
Figure 2. Output Current versus Input Current
2
Motorola Optoelectronics Device Data