MCP1630TE Ver la hoja de datos (PDF) - Microchip Technology

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Fabricante

MCP1630TE

High-Speed, Microcontroller-Adaptable, Pulse Width Modulator

Microchip Technology 

MCP1630

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,

VIN for typical values = 5.0V, TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Current Sense Input

Maximum Current Sense Signal VCS_MAX

0.85

0.9

0.95

V Set by maximum error amplifier

clamp voltage, divided by 3.

Delay From CS to VEXT

Minimum Duty Cycle

TCS_VEXT

—

12

25

DCMIN

—

—

0

Current Sense Input Bias Current

Internal Driver

ICS_B

—

-0.1

—

ns

% VFB = VREF + 0.1V,

VCS = GND

µA VIN = 5V

RDSON P-channel

RDSON N-channel

VEXT Rise Time

VEXT Fall Time

Protection Features

RDSon_P

—

10

30

RDSon_N

—

7

30

TRISE

—

5.9

18

TFALL

—

6.2

18

Ω

Ω

ns CL = 100 pF

Typical for VIN = 3V

ns CL = 100 pF

Typical for VIN = 3V

Under Voltage Lockout

UVLO

2.7

—

3.0

V VIN falling, VEXT low state when in

UVLO

Under Voltage Lockout

Hysteresis

UVLO_HYS

50

75

150

mV

Thermal Shutdown

TSHD

—

150

—

°C

Thermal Shutdown Hysteresis

TSHD_HYS

—

18

—

°C

Note 1: Capable of higher frequency operation depending on minimum and maximum duty cycles needed.

2: External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal

levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum

values. Not production tested.

3: The reference input of the internal amplifier is capable of rail-to-rail operation.

TEMPERATURE SPECIFICATIONS

Electrical Specifications: VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF. TA = -40°C to +125°C.

Parameters

Sym Min Typ Max Units

Conditions

Temperature Ranges

Operating Junction Temperature

Range

Storage Temperature Range

Maximum Junction Temperature

Thermal Package Resistances

Thermal Resistance, MSOP8

TA

-40

— +125 °C Steady state

TA

-65

— +150 °C

TJ

—

— +150 °C Transient

θJA

— 208 — °C/W Typical 4-layer board

 2004 Microchip Technology Inc.

DS21896A-page 5

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