MCP6021R Ver la hoja de datos (PDF) - Microchip Technology
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MCP6021R Datasheet PDF : 42 Pages
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MCP6021/1R/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA
-40
—
+85
°C
TA
-40
—
+125
°C
TA
-40
—
+125
°C Note 1
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT-23
θJA
—
256
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
206
—
°C/W
Thermal Resistance, 8L-TSSOP
θJA
—
124
—
°C/W
Thermal Resistance, 14L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any
case, the internal junction temperature (TJ) must not exceed the absolute maximum specification of 150°C.
CS
tON
tOFF
VOUT High-Z
ISS -50 nA
(typical)
ICS 10 nA
(typical)
Amplifier On
-1 mA
(typical)
10 nA
(typical)
High-Z
-50 nA
(typical)
10 nA
(typical)
FIGURE 1-1:
Timing diagram for the CS
pin on the MCP6023.
1.1 Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.7 “Supply Bypass”.
VIN RN
1 kΩ
VDD/2 RG
2 kΩ
VDD 0.1 µF 1 µF
MCP6021
RF
2 kΩ
CB1 CB2
VOUT
CL
RL
60 pF 10 kΩ
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD/2 RN
1 kΩ
VIN RG
2 kΩ
VDD 0.1 µF 1 µF
MCP6021
CB1 CB2
VOUT
CL
RL
RF
60 pF 10 kΩ
VL
2 kΩ
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
© 2009 Microchip Technology Inc.
DS21685D-page 5
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