Nov./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
S PARAMETERS
Freq.
(GHz)
S11
(mag) (ang)
1
0.989 -13.0
2
0.973 -25.9
3
0.949 -38.7
4
0.926 -52.0
5
0.890 -64.9
6
0.828 -81.1
7
0.776 -95.6
8
0.723 -110.6
9
0.662 -126.6
10
0.605 -142.6
11
0.551 -158.2
12
0.514 -174.5
13
0.488 167.0
14
0.486 149.0
15
0.480 131.8
16
0.509 113.0
17
0.536
95.1
18
0.569
78.2
19
0.609
62.7
20
0.642
47.3
21
0.674
34.3
22
0.707
21.1
23
0.742
9.2
24
0.753
-2.2
25
0.775 -12.5
26
0.803 -22.5
S21
(mag) (ang)
4.537 165.8
4.502 152.9
4.472 140.4
4.460 127.3
4.431 114.9
4.394
99.8
4.311
86.3
4.230
73.2
4.094
59.9
3.943
47.4
3.826
35.4
3.740
23.7
3.622
11.2
3.572
-1.1
3.512 -12.6
3.425 -26.2
3.349 -39.1
3.226 -52.1
3.091 -66.1
2.934 -79.2
2.752 -91.8
2.617 -104.8
2.471 -117.4
2.307 -130.2
2.139
2.008
-142.4
-155.0
(VDS=2V,ID=10mA, Ta=25°C)
S12
S22
(mag) (ang) (mag) (ang)
0.014
78.9
0.637
-9.7
0.028
71.8
0.629
-19.6
0.041
62.7
0.621
-29.2
0.054
53.2
0.608
-39.0
0.066
44.4
0.592
-48.2
0.076
33.4
0.539
-60.1
0.085
24.1
0.505
-70.2
0.093
15.2
0.469
-80.4
0.099
5.4
0.423 -90.7
0.102
-4.0
0.368 -100.2
0.102 -12.9 0.318 -108.8
0.100 -19.7 0.279 -116.3
0.099 -28.1 0.232 -126.2
0.098 -32.1 0.203 -138.3
0.094 -38.4 0.169 -148.1
0.099 -43.0 0.148 -175.1
0.099 -49.9 0.133 157.1
0.100 -58.5 0.132 120.7
0.099
-66.5
0.160
92.2
0.096
-75.2
0.204
67.8
0.091
-83.8
0.250
50.6
0.089
-92.5
0.293
37.0
0.082 -102.8 0.350
23.8
0.081 -111.9 0.390
13.5
0.072 -118.9 0.430
2.4
0.069 -135.9 0.474
-5.7
NOISE PARAMETERS (VDS=2V,ID=10mA, Ta=25°C)
Freq.
Γopt
Rn
NFmin
(GHz) (mag)
(ang)
(dB)
18
0.358 -137.2
0.12
0.51
20
0.372
-91.0
0.14
0.55
22
0.390
-47.7
0.63
0.77
24
0.417
-14.9
1.05
1.05
26
0.473
10.5
1.26
1.25
Note) Rn is normalized by 50ohm
Board: εr=2.6
thickness=0.4mm
HEMT mount
Gate
Drain
4-φ0.4
Reference Point
0.65
2.2mm
1.0mm
Reference Point
MITSUBISHI
(4/5)
Nov./2006