MHPM6B20E60D3 Ver la hoja de datos (PDF) - Motorola => Freescale

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componentes Descripción

Fabricante

MHPM6B20E60D3

Hybrid Power Module

Motorola => Freescale 

MHPM6B20E60D3

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

Rating

Junction Temperature Range

Short Circuit Duration (VCE = 400 V, TJ = 125°C)

Isolation Voltage, pin to baseplate

Operating Case Temperature Range

Storage Temperature Range

Mounting Torque — Heat Sink Mounting Holes

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

DC AND SMALL SIGNAL CHARACTERISTICS

Input Rectifier Forward Voltage (I = 20 A)

TJ = 125°C

Maximum Instantaneous Reverse Current (V = 900 V)

TJ = 150°C

Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)

Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)

Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)

TJ = 125°C

Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)

TJ = 125°C

Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)

THERMAL CHARACTERISTICS (EACH DIE)

Thermal Resistance — IGBT

Thermal Resistance — Free–Wheeling Diode

Thermal Resistance — Input Rectifier

Symbol

TJ

tsc

VISO

TC

Tstg

—

Symbol

Min

VF

—

—

IR

—

—

IGES

—

ICES

—

VGE(th)

4.0

V(BR)CES

600

VCE(SAT)

—

—

VF

—

—

Cies

—

RqJC

—

RqJC

—

RqJC

—

Value

– 40 to +150

10

2500

– 40 to +95

– 40 to +150

12

Unit

°C

ms

Vac

°C

°C

lb–in

Typ

Max

Unit

1.0

1.25

V

0.92

—

50

—

mA

3000

—

—

±50

mA

5.0

100

mA

6.0

8.0

V

—

—

V

2.2

2.6

V

2.5

—

2.0

2.3

V

1.8

—

TBD

—

pF

1.8

2.2

°C/W

2.6

3.3

°C/W

3.4

4.2

°C/W

2

Motorola IGBT Device Data

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