MJD44 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
MJD44 Datasheet PDF : 5 Pages
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MJD44H11 / MJD45H11
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
IC = 30 mA
ICES Collect or Cut-off
Cu r re nt
VCB = rated VCEO VBE = 0
IEBO Emitt er Cut-off Current VEB = 5V
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 8 A
IB = 0.4 A
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 8 A
IB = 0.8 A
hFE∗ DC Current G ain
IC = 2 A
IC = 4 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
∗ For PNP types the values are intented negative.
VCE = 1 V
VCE = 1 V
Min.
80
Typ .
60
40
M a x.
10
50
1
1.5
Unit
V
µA
µA
V
V
Safe Operating Area
Derating Curves
2/5
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