MJE15032(2014) Ver la hoja de datos (PDF) - ON Semiconductor
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MJE15032 Datasheet PDF : 6 Pages
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MJE15032 (NPN), MJE15033 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
VCEO(sus)
250
ICBO
−
IEBO
−
Vdc
−
mAdc
10
mAdc
10
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
−
70
−
50
−
10
−
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VCE(sat)
−
VBE(on)
−
Vdc
0.5
Vdc
1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
30
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
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