MJE5730G(2015) Ver la hoja de datos (PDF) - ON Semiconductor
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componentes Descripción
Fabricante
MJE5730G Datasheet PDF : 6 Pages
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MJE5730, MJE5731, MJE5731A
1.4
1.2
1.0
VBE(sat) @ IC/IB = 5.0
0.8
0.6
0.4
TJ = - 55°C
25°C
150°C
0.2
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base−Emitter Voltage
1.0
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 4. Normalized Power Derating
10
5.0
2.0
1.0
0.5
TC = 25°C
1.0 ms
dc
100 ms
500 ms
0.2
0.1
0.05
0.02
0.01
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730
MJE5731
MJE5732
10
20 30 50
100
200 300 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02
0.1 0.2
RqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
20
t, TIME (ms)
50 100 200
500 1 k
Figure 6. Thermal Response
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