MMBF4392LT1 Ver la hoja de datos (PDF) - Motorola => Freescale

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Fabricante

MMBF4392LT1

JFET Switching Transistors

Motorola => Freescale 

MMBF4391LT1 MMBF4392LT1 MMBF4393LT1

100

90

Tchannel = 25°C

10

9.0

80

8.0

70

rDS(on) @ VGS = 0

7.0

60

6.0

50

VGS(off)

5.0

40

4.0

30

3.0

20

2.0

10

1.0

0

0

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

IDSS, ZERO–GATE VOLTAGE DRAIN CURRENT (mA)

Figure 10. Effect of IDSS on Drain–Source

Resistance and Gate–Source Voltage

NOTE 2

The Zero–Gate–Voltage Drain Current (IDSS) is the principle determi-

nant of other J–FET characteristics. Figure 10 shows the relationship

of Gate–Source Off Voltage (VGS(off)) and Drain–Source On Resis-

tance (rDS(on)) to IDSS. Most of the devices will be within ±10% of the

values shown in Figure 10. This data will be useful in predicting the

characteristic variations for a given part number.

For example:

Unknown

rDS(on) and VGS range for an MMBF4392

The electrical characteristics table indicates that an MMBF4392

has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52

Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corre-

sponding VGS values are 2.2 volts and 4.8 volts.

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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